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ZXMN10A11K
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Symbol
V DSS
V GS
Value
100
± 20
Unit
V
V
Continuous Drain current
V GS = 10V
(Note 3)
T A = 70 ° C (Note 3)
I D
3.5
2.8
A
(Note 2)
2.4
Pulsed Drain current
V GS = 10V
(Note 4)
I DM
9.9
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
I S
I SM
8.4
9.9
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
(Note 2)
Symbol
Value
4.06
32.4
Unit
Power dissipation
Linear derating factor
(Note 3)
P D
8.5
68.0
W
mW/ ° C
(Note 6)
(Note 2)
2.11
16.8
30.8
Thermal Resistance, Junction to Ambient
(Note 3)
R θ JA
14.7
° C/W
(Note 6)
59.1
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
R θ JL
T J , T STG
1.10
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
2 of 8
www.diodes.com
January 2010
? Diodes Incorporated
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